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The wafer bond characterization is based on different methods and tests. Considered a high importance of the wafer are the successful bonded wafers without flaws. Those flaws can be caused by void formation in the interface due to unevenness or impurities. The bond connection is characterized for wafer bond development or quality assessment of fabricated wafers and sensors. == Overview == Wafer bonds are commonly characterized by three important encapsulation parameters: bond strength, hermeticity of encapsulation and bonding induced stress.〔 The bond strength can be evaluated using double cantilever beam or chevron respectively micro-chevron tests. Other pull tests as well as burst, shear or bend tests enable the determination of the bond strength.〔 The packaging hermeticity is characterized using membrane, He-leak, resonator/pressure tests.〔 Three additional possibilities to evaluate the bond connection are optical, electron and acoustic measurements. At first, optical measurement techniques are optical microscopy, IR transmission microscopy and visual inspection. Secondly, the electron measurement is commonly applied using electron microscopy, e.g. scanning electron microscopy (SEM), high voltage transmittance electron microscopy (HVTEM) and high resolution scanning electron microscopy (HRSEM). And finally, typical acoustic measurement approaches are scanning acoustic microscope (SAM), scanning laser acoustic microscope (SLAM) and C-mode scanning acoustic microscope (C-SAM). The specimen preparation is sophisticated and the mechanical, electronic properties are important for the bonding technology characterization and comparison.〔 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Bond characterization」の詳細全文を読む スポンサード リンク
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